Paper Title:
Preannealing Effect on Mobility of N-/Al-Coimplanted and Over-Oxidized 4H-SiC MOSFETs
  Abstract

The authors investigated the effect of preannealing on N-/Al-coimplanted and over-oxidized Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs). The preannealing process causes a decrease of the Hall mobility and the effective mobility, and an increase of the interface state density. Secondary ion mass spectroscopy (SIMS) measurements revealed that the N concentration at the SiO2/SiC interface in preannealed samples is lower than in not-preannealed samples, which might be the reason for in the increase of the interface state density. In MOSFETs without preannealing, more N atoms are piled up at the SiO2/SiC interface, leading to the lower interface state density and higher mobility.

  Info
Periodical
Materials Science Forum (Volumes 645-648)
Edited by
Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller
Pages
487-490
DOI
10.4028/www.scientific.net/MSF.645-648.487
Citation
Y. Nanen, B. Zippelius, S. Beljakowa, L. Trapaidze, M. Krieger, T. Kimoto, G. Pensl, "Preannealing Effect on Mobility of N-/Al-Coimplanted and Over-Oxidized 4H-SiC MOSFETs", Materials Science Forum, Vols. 645-648, pp. 487-490, 2010
Online since
April 2010
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Price
$32.00
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