Paper Title:
Improved 4H-SiC MOS Interface Produced by Oxidized-SiN Gate Oxide
  Abstract

We have investigated the electrical and physical properties of the oxidized-SiN with or without post oxidation annealing (POA) in N2 gas. A significant reduction in interface-trap density (Dit) has been observed in the oxidized-SiN with N2 POA for 60 min if compared with other oxides. The reason for this has been explained in this paper.

  Info
Periodical
Materials Science Forum (Volumes 645-648)
Edited by
Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller
Pages
511-514
DOI
10.4028/www.scientific.net/MSF.645-648.511
Citation
J. H. Moon, J. H. Yim, H. S. Seo, C. H. Kim, D. H. Lee, K. Y. Cheong, W. Bahng, N. K. Kim, H. J. Kim, "Improved 4H-SiC MOS Interface Produced by Oxidized-SiN Gate Oxide", Materials Science Forum, Vols. 645-648, pp. 511-514, 2010
Online since
April 2010
Keywords
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Price
$32.00
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