Paper Title:
Investigation of Oxide Films Prepared by Direct Oxidation of C-Face 4H-SiC in Nitric Oxide
  Abstract

Characteristics of metal–oxide–semiconductor (MOS) capacitors and MOS field-effect transistors (MOSFETs) fabricated by direct oxidation of C-face 4H-SiC in NO were investigated. It was found that nitridation of the C-face 4H-SiC MOS interface generates near-interface traps (NITs) in the oxide. These traps capture channel mobile electrons and degrade the performance of MOSFETs. The NITs can be reduced by unloading the samples at room temperature after oxidation. It is important to reduce not only the interface states but also the NITs to fabricate high-performance C-face 4H-SiC MOSFETs with nitrided gate oxide.

  Info
Periodical
Materials Science Forum (Volumes 645-648)
Edited by
Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller
Pages
515-518
DOI
10.4028/www.scientific.net/MSF.645-648.515
Citation
D. Okamoto, H. Yano, Y. Oshiro, T. Hatayama, Y. Uraoka, T. Fuyuki, "Investigation of Oxide Films Prepared by Direct Oxidation of C-Face 4H-SiC in Nitric Oxide", Materials Science Forum, Vols. 645-648, pp. 515-518, 2010
Online since
April 2010
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Price
$32.00
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