Paper Title:
A C-V Method of Slow-Switching Interface Traps Identification in Silicon Carbide MOS Structures
  Abstract

A novel method based on the analysis of the C-V hysteresis change with increasing charge release time is proposed. The presence of a band of deep traps was demonstrated using this method in 3C-SiC samples. The same band of deep traps was also observed using photo-electric measurements of barrier height EBS in the same samples.

  Info
Periodical
Materials Science Forum (Volumes 645-648)
Edited by
Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller
Pages
523-526
DOI
10.4028/www.scientific.net/MSF.645-648.523
Citation
T. Gutt, H. M. Przewlocki, M. Bakowski, "A C-V Method of Slow-Switching Interface Traps Identification in Silicon Carbide MOS Structures", Materials Science Forum, Vols. 645-648, pp. 523-526, 2010
Online since
April 2010
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Jeong Hyun Moon, Da Il Eom, Sang Yong No, Ho Keun Song, Jeong Hyuk Yim, Hoon Joo Na, Jae Bin Lee, Hyeong Joon Kim
Abstract:The La2O3 and Al2O3/La2O3 layers were grown on 4H-SiC by atomic layer deposition (ALD) method. The electrical properties of La2O3 on 4H-SiC...
1083
Authors: Antonella Poggi, Francesco Moscatelli, Andrea Scorzoni, Giovanni Marino, Roberta Nipoti, Michele Sanmartin
Abstract:Many investigations have been conducted on the growth conditions of SiO2 on SiC to improve the oxide quality and the properties of the...
979
Authors: Yusuke Kagei, Takashi Kirino, Yuu Watanabe, Shuhei Mitani, Yuki Nakano, Takashi Nakamura, Takuji Hosoi, Takayoshi Shimura, Heiji Watanabe
Abstract:We propose a treatment of nitrogen radical irradiation to 4H-SiC surfaces for improving thermally grown SiO2/SiC interfaces. X-ray...
507
Authors: Jens Eriksson, Fabrizio Roccaforte, Ming Hung Weng, Filippo Giannazzo, Jean Lorenzzi, Vito Raineri
Abstract:Defects in cubic silicon carbide (3C-SiC) epilayers, that were grown using different techniques and on different substrates, were studied in...
273
Authors: Viktoryia Uhnevionak, Christian Strenger, Alex Burenkov, Vincent Mortet, Elena Bedel-Pereira, Fuccio Cristiano, Anton J. Bauer, Peter Pichler
Chapter 7: Electrical and Structural Characterization
Abstract:4H-SiC n-channel lateral MOSFETs were manufactured and characterized electrically by current-voltage measurements and by numerical...
533