Paper Title:
EDMR and EPR Studies of 4H SiC MOSFETs and Capacitors
  Abstract

We have extended a magnetic resonance based study of MOS devices to include electrically detected magnetic resonance (EDMR) measurements of fully processed MOSFETs from three facilities as well as conventional electron paramagnetic resonance (EPR) resonance measurements on simple SiC/SiO2 structures. We find close similarity between the conventional EPR and the EDMR spectra.

  Info
Periodical
Materials Science Forum (Volumes 645-648)
Edited by
Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller
Pages
527-530
DOI
10.4028/www.scientific.net/MSF.645-648.527
Citation
C. J. Cochrane, B. C. Bittel, P. M. Lenahan, J. Fronheiser, K. Matocha, A. J. Lelis, "EDMR and EPR Studies of 4H SiC MOSFETs and Capacitors", Materials Science Forum, Vols. 645-648, pp. 527-530, 2010
Online since
April 2010
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Price
$32.00
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