Paper Title:
Crystalline Quality of Channel Regions in SiC Buried Gate Static Induction Transistors (SiC-BGSITs)
  Abstract

We investigated the crystalline quality and electrical properties of the channel regions in 4H-SiC buried gate static induction transistors (SiC-BGSITs). To accurately determine the characteristics of the channel regions, we performed transmission electron microscopy and scanning spreading resistance microscopy. It was found that the channel regions have high crystalline quality and no significant fluctuations in doping concentration.

  Info
Periodical
Materials Science Forum (Volumes 645-648)
Edited by
Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller
Pages
535-538
DOI
10.4028/www.scientific.net/MSF.645-648.535
Citation
A. Takatsuka, Y. Tanaka, K. Yano, T. Yatsuo, K. Arai, "Crystalline Quality of Channel Regions in SiC Buried Gate Static Induction Transistors (SiC-BGSITs)", Materials Science Forum, Vols. 645-648, pp. 535-538, 2010
Online since
April 2010
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