Experimental Verification of the Cluster Effect on Giant Step Bunching on 4H-SiC (0001) Surfaces |
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| Journal | Materials Science Forum (Volumes 645 - 648) |
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| Volume | Silicon Carbide and Related Materials 2009 |
| Edited by | Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller |
| Pages | 543-546 |
| DOI | 10.4028/www.scientific.net/MSF.645-648.543 |
| Citation | Yuuki Ishida et al., 2010, Materials Science Forum, 645-648, 543 |
| Online since | April, 2010 |
| Authors | Yuuki Ishida, Tetsuo Takahashi, Hajime Okumura, Kazuo Arai, Sadafumi Yoshida |
| Keywords | Etching, Giant Step Bunching |
| Abstract | In this study, we investigated the cluster effect on the occurrence of giant step bunching. We generated carbon clusters on 4H-SiC (0001) surfaces by thermal decomposition of SiC in an Ar atmosphere and controlled the surface concentrations of the clusters by adding H2 gas. We found the boundaries between surfaces with and without giant steps to show Arrhenius-type behavior. This behavior agreed with our predictions deduced from a chemical reaction model that takes the cluster effect into account, suggesting that giant step bunching is attributable to the formation of clusters on SiC. |
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