Study of the Spontaneous Nucleation of 3C-SiC Single Crystals Using CF-PVT Technique |
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| Journal | Materials Science Forum (Volumes 645 - 648) |
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| Volume | Silicon Carbide and Related Materials 2009 |
| Edited by | Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller |
| Pages | 55-58 |
| DOI | 10.4028/www.scientific.net/MSF.645-648.55 |
| Citation | Irina G. Galben-Sandulache et al., 2010, Materials Science Forum, 645-648, 55 |
| Online since | April, 2010 |
| Authors | Irina G. Galben-Sandulache, Guoli L. Sun, Jean Marc Dedulle, Thierry Ouisse, Roland Madar, Michel Pons, Didier Chaussende |
| Keywords | Bulk Crystal Growth, CF-PVT Technique |
| Abstract | The control of the nucleation step is a critical issue for a future development of 3C-SiC bulk growth. The possibility to get very high quality 3C-SiC single crystal through self-nucleation on graphite was already demonstrated but the large number of nuclei limits the growth of only one crystal. In this study, we have investigated different configurations that help improving the nucleation step. For that, the “necking” stage, well established in Bridgman or Czochralski growth processes, has been successfully applied to the growth of 3C-SiC with the CF-PVT technique. This has allowed getting only one 3C-SiC crystal. The enlarged parts, after having passed the neck, are of high structural quality. |
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