Paper Title:
Study of the Spontaneous Nucleation of 3C-SiC Single Crystals Using CF-PVT Technique
  Abstract

The control of the nucleation step is a critical issue for a future development of 3C-SiC bulk growth. The possibility to get very high quality 3C-SiC single crystal through self-nucleation on graphite was already demonstrated but the large number of nuclei limits the growth of only one crystal. In this study, we have investigated different configurations that help improving the nucleation step. For that, the “necking” stage, well established in Bridgman or Czochralski growth processes, has been successfully applied to the growth of 3C-SiC with the CF-PVT technique. This has allowed getting only one 3C-SiC crystal. The enlarged parts, after having passed the neck, are of high structural quality.

  Info
Periodical
Materials Science Forum (Volumes 645-648)
Edited by
Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller
Pages
55-58
DOI
10.4028/www.scientific.net/MSF.645-648.55
Citation
I. G. Galben-Sandulache, G. L. Sun, J. M. Dedulle, T. Ouisse, R. Madar, M. Pons, D. Chaussende, "Study of the Spontaneous Nucleation of 3C-SiC Single Crystals Using CF-PVT Technique", Materials Science Forum, Vols. 645-648, pp. 55-58, 2010
Online since
April 2010
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Price
$32.00
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