Paper Title:
Study of Indentation Damage in Single Crystal Silicon Carbide by Using Micro Raman Spectroscopy
  Abstract

Raman spectroscopic study is carried on the Vickers indented area on the surface of a single crystal silicon carbide (4H- and 6H-SiC) as a nondestructive structure probe to investigate a residual stress and crystal structure. LO phonon frequency shifts and the broad and weak bands around LO phonon band were observed. The residual strain field around the indentation is discussed.

  Info
Periodical
Materials Science Forum (Volumes 645-648)
Edited by
Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller
Pages
551-554
DOI
10.4028/www.scientific.net/MSF.645-648.551
Citation
M. Yamaguchi, M. Fujitsuka, S. Ueno, I. Miura, W. Erikawa, T. Tomita, "Study of Indentation Damage in Single Crystal Silicon Carbide by Using Micro Raman Spectroscopy", Materials Science Forum, Vols. 645-648, pp. 551-554, 2010
Online since
April 2010
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