Paper Title:
Single Shockley Faults Enlargement during Micro-Photoluminescence Defects Mapping
  Abstract

Single Shockley faults have been studied in 4H-SiC epitaxial layers by using a spatial resolved micro-photoluminescence technique. In particular the Effect of the UV pumping laser has been investigated. We demonstrated that high power density exposition at 325 nm affects drastically the structural properties of the epitaxial layers leading to a growth of this defect. We also demonstrated that by opportunely tuning the power density of the UV laser on the sample it is possible to analyze a wide area without producing any negative effect.

  Info
Periodical
Materials Science Forum (Volumes 645-648)
Edited by
Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller
Pages
555-558
DOI
10.4028/www.scientific.net/MSF.645-648.555
Citation
A. Canino, M. Camarda, F. La Via, "Single Shockley Faults Enlargement during Micro-Photoluminescence Defects Mapping", Materials Science Forum, Vols. 645-648, pp. 555-558, 2010
Online since
April 2010
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Price
$32.00
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