Paper Title:
Growth Rate and Thickness Uniformity of Epitaxial Graphene
  Abstract

The paper provides a deeper understanding of key-parameters of epitaxial graphene growth techniques on SiC. At 16000C, the graphene layer is continuous and covers a large area of the substrate. Significant differences in the growth rate could be observed for different reactor pressures and the polarity of SiC substrates as well as for the substrate miscut and surface quality. In addition, graphene thickness uniformity and mechanism of ridges creation was examined.

  Info
Periodical
Materials Science Forum (Volumes 645-648)
Edited by
Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller
Pages
569-572
DOI
10.4028/www.scientific.net/MSF.645-648.569
Citation
W. Strupiński, A. Drabińska, R. Bożek, J. Borysiuk, A. Wysmolek, R. Stepniewski, K. Kościewicz, P. Caban, K. Korona, K. Grodecki, P. A. Geslin, J. M. Baranowski, "Growth Rate and Thickness Uniformity of Epitaxial Graphene", Materials Science Forum, Vols. 645-648, pp. 569-572, 2010
Online since
April 2010
Keywords
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Price
$32.00
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