Paper Title:
Structural Evaluation of Graphene/SiC (0001) Grown in Atmospheric Pressure
  Abstract

Graphene growth on SiC in atmospheric pressure argon exhibits large terrace sizes and coverage over the entire substrate surface. Graphene growth and the resulting morphology are correlated with the characteristics of the growth chamber and the surface quality of the starting SiC substrate. Without in-situ surface preparation prior to growth, we observe “wrinkles” in the graphene surface. Graphitic-like disordered structures are formed at 1500°C while atomically flat graphene terraces are formed above 1600°C.

  Info
Periodical
Materials Science Forum (Volumes 645-648)
Edited by
Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller
Pages
573-576
DOI
10.4028/www.scientific.net/MSF.645-648.573
Citation
J. Boeckl, W.C. Mitchel, E. Clarke, R. L. Barbosa, W. J. Lu, "Structural Evaluation of Graphene/SiC (0001) Grown in Atmospheric Pressure ", Materials Science Forum, Vols. 645-648, pp. 573-576, 2010
Online since
April 2010
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Price
$32.00
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