Paper Title:
Graphene Growth on C and Si-Face of 4H-SiC – TEM and AFM Studies
  Abstract

Transmission Electron Microscopy (TEM) investigations of graphene layers synthesized on Si and C-terminated on-axis oriented 4H-SiC are presented. The high-resolution TEM (HRTEM) revealed distinctive distance differences between the first carbon graphene layer and SiC surface for both polarities. The prolonged annealing of SiC with carbon face shows, that in addition to the increase of number of graphene layers, there is also observed splitting between stack of graphene layers and the surface of SiC substrate. In addition, the density of so called “puckers” increases.

  Info
Periodical
Materials Science Forum (Volumes 645-648)
Edited by
Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller
Pages
577-580
DOI
10.4028/www.scientific.net/MSF.645-648.577
Citation
J. Borysiuk, R. Bożek, W. Strupiński, J. M. Baranowski, "Graphene Growth on C and Si-Face of 4H-SiC – TEM and AFM Studies", Materials Science Forum, Vols. 645-648, pp. 577-580, 2010
Online since
April 2010
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