Paper Title:
Differences between Graphene Grown on Si-Face and C-Face
  Abstract

Epitaxial graphene growth is significantly different depending on the polarity of the 6H-SiC surface: Si- or C-face. On the Si-face, a uniform coverage of few layers on the whole sample can be obtained, but with electrical properties disturbed by the presence of a Carbon-rich buffer layer at the interface. On the contrary, on the C-face, we demonstrated that almost free-standing very large monolayers of graphene can be obtained by covering the sample with a graphitic cap during the growth.

  Info
Periodical
Materials Science Forum (Volumes 645-648)
Edited by
Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller
Pages
581-584
DOI
10.4028/www.scientific.net/MSF.645-648.581
Citation
N. Camara, A. Caboni, J. R. Huntzinger, A. Tiberj, N. Mestres, P. Godignon, J. Camassel, "Differences between Graphene Grown on Si-Face and C-Face", Materials Science Forum, Vols. 645-648, pp. 581-584, 2010
Online since
April 2010
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Price
$32.00
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