Paper Title:
Epitaxial Graphene Elaborated on 3C-SiC(111)/Si Epilayers
  Abstract

This article explores the formation of graphene layers on 3C-SiC(111) epilayers grown on silicon substrates using thermal annealing under Ultra High Vaccum (UHV) environment. The formation of graphene is demonstrated by use of near field microscopy (STM and AFM) and X-ray Photoelectron Spectroscopy (XPS). The evolution of the surface stoichiometry of the 3C-SiC(111) pseudo substrates during the graphitization process is similar to that of the commonly used Si terminated -SiC bulk substrates, starting from a Si rich to the C rich surface characterized by a diffraction pattern. Graphitization process leads to a strong modification of the surface at a microscopic scale which is compared to that reported in case of 6H-SiC substrates. XPS spectra reveal the presence of typical C-C bonds related to a graphitic arrangement. Its high level of ordering is attested by the observation both of (66)SiC and (11)graphene surface reconstructions by STM. These results demonstrate the formation of graphene on 3C-SiC(111)/Si pseudo substrates. They open perspectives for developing novel C/SiC/Si heterostructures and put light on the ability of 3C-SiC/Si templates to become a low cost alternative of onerous -SiC substrates.

  Info
Periodical
Materials Science Forum (Volumes 645-648)
Edited by
Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller
Pages
585-588
DOI
10.4028/www.scientific.net/MSF.645-648.585
Citation
A. Ouerghi, M. Portail, A. Kahouli, L. Travers, T. Chassagne, M. Zielinski, "Epitaxial Graphene Elaborated on 3C-SiC(111)/Si Epilayers", Materials Science Forum, Vols. 645-648, pp. 585-588, 2010
Online since
April 2010
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Wlodek Strupiński, Rafał Bożek, Jolanta Borysiuk, Kinga Kościewicz, Andrzej Wysmolek, Roman Stepniewski, Jacek M. Baranowski
Abstract:The so-called “growth” of graphene was performed using a horizontal chemical vapor deposition (CVD) hot-wall reactor. In-situ etching in the...
199
Authors: Ameer Al-Temimy, Christian Riedl, Ulrich Starke
Abstract:By carbon evaporation under ultrahigh vacuum (UHV) conditions, epitaxial graphene can be grown on SiC(0001) at significantly lower...
593
Authors: Christian Riedl, Camilla Coletti, Takayuki Iwasaki, Ulrich Starke
Abstract:In this report we review how intrinsic drawbacks of epitaxial graphene on SiC(0001) such as n-doping and strong electronic influence of the...
623
Authors: Sushant Sonde, Carmelo Vecchio, Filippo Giannazzo, Rositza Yakimova, Emanuele Rimini, Vito Raineri
Abstract:Local current transport across graphene/4H-SiC was studied with nanometric scale lateral resolution by Scanning Current Spectroscopy on both...
769
Authors: Ulrich Starke, Camilla Coletti, Konstantin Emtsev, Alexei A. Zakharov, Thierry Ouisse, Didier Chaussende
Chapter 4: Graphene
Abstract:Large scale, homogeneous quasi-free standing monolayer graphene is obtained on a (111) oriented cubic SiC bulk crystal. The free standing...
617