Paper Title:
Growth of Few Layers Graphene on Silicon Carbide from Nickel Silicide Supersaturated with Carbon
  Abstract

Few Layers Graphene (FLG) films were grown on the carbon-terminated surface of 4H-SiC from nickel silicide supersaturated with carbon. The process was realised by annealing of thin Ni films deposited on silicon carbide followed by wet processing to remove the nickel silicide. To identify and characterize the fabricated FLG films, micro-Raman scattering spectroscopy, AFM and optical microscopy have been used. The films grown on samples with initially deposited nickel thinner than 20 nm show clear graphene footprints in micro-Raman scattering spectra, namely a single component, Lorentzian shape 2D band with FWHM remarkably lower than that of the 2D peak of graphite.

  Info
Periodical
Materials Science Forum (Volumes 645-648)
Edited by
Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller
Pages
589-592
DOI
10.4028/www.scientific.net/MSF.645-648.589
Citation
K. Vassilevski, I. P. Nikitina, A. B. Horsfall, N. G. Wright, C. M. Johnson, "Growth of Few Layers Graphene on Silicon Carbide from Nickel Silicide Supersaturated with Carbon", Materials Science Forum, Vols. 645-648, pp. 589-592, 2010
Online since
April 2010
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Price
$32.00
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