Growth of Few Layers Graphene on Silicon Carbide from Nickel Silicide Supersaturated with Carbon |
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| Journal | Materials Science Forum (Volumes 645 - 648) |
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| Volume | Silicon Carbide and Related Materials 2009 |
| Edited by | Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller |
| Pages | 589-592 |
| DOI | 10.4028/www.scientific.net/MSF.645-648.589 |
| Citation | Konstantin Vassilevski et al., 2010, Materials Science Forum, 645-648, 589 |
| Online since | April, 2010 |
| Authors | Konstantin Vassilevski, Irina P. Nikitina, Alton B. Horsfall, Nicolas G. Wright, C. Mark Johnson |
| Keywords | Epitaxial Graphene, Graphene, Raman Spectroscopy |
| Abstract | Few Layers Graphene (FLG) films were grown on the carbon-terminated surface of 4H-SiC from nickel silicide supersaturated with carbon. The process was realised by annealing of thin Ni films deposited on silicon carbide followed by wet processing to remove the nickel silicide. To identify and characterize the fabricated FLG films, micro-Raman scattering spectroscopy, AFM and optical microscopy have been used. The films grown on samples with initially deposited nickel thinner than 20 nm show clear graphene footprints in micro-Raman scattering spectra, namely a single component, Lorentzian shape 2D band with FWHM remarkably lower than that of the 2D peak of graphite. |
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