Heavily p-Type Doping of Bulk 6H-SiC and 3C-SiC Grown from Al-Si Melts |
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| Journal | Materials Science Forum (Volumes 645 - 648) |
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| Volume | Silicon Carbide and Related Materials 2009 |
| Edited by | Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller |
| Pages | 59-62 |
| DOI | 10.4028/www.scientific.net/MSF.645-648.59 |
| Citation | Frédéric Mercier et al., 2010, Materials Science Forum, 645-648, 59 |
| Online since | April, 2010 |
| Authors | Frédéric Mercier, Irina G. Galben-Sandulache, Maya Marinova, Georgios Zoulis, Thierry Ouisse, Efstathios K. Polychroniadis, Didier Chaussende |
| Keywords | Liquid Phase Epitaxy (LPE), Raman Spectroscopy, TEM |
| Abstract | We report in this work, the solution growth of heavily p-type doped 3C-SiC and 6H-SiC. Description of the 3C and 6H-SiC crystals in terms of defects and resistivity are presented and discussed with respect to growth conditions such as temperature, Al content in the melt and seed polarity. Crystals and thick layers are investigated by means of TEM, NDIC microscopy and Raman. |
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