Paper Title:
Heavily p-Type Doping of Bulk 6H-SiC and 3C-SiC Grown from Al-Si Melts
  Abstract

We report in this work, the solution growth of heavily p-type doped 3C-SiC and 6H-SiC. Description of the 3C and 6H-SiC crystals in terms of defects and resistivity are presented and discussed with respect to growth conditions such as temperature, Al content in the melt and seed polarity. Crystals and thick layers are investigated by means of TEM, NDIC microscopy and Raman.

  Info
Periodical
Materials Science Forum (Volumes 645-648)
Edited by
Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller
Pages
59-62
DOI
10.4028/www.scientific.net/MSF.645-648.59
Citation
F. Mercier, I. G. Galben-Sandulache, M. Marinova, G. Zoulis, T. Ouisse, E. K. Polychroniadis, D. Chaussende, "Heavily p-Type Doping of Bulk 6H-SiC and 3C-SiC Grown from Al-Si Melts", Materials Science Forum, Vols. 645-648, pp. 59-62, 2010
Online since
April 2010
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Price
$32.00
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