Paper Title:
Growth and Characterization of Epitaxial Graphene on SiC Induced by Carbon Evaporation
  Abstract

By carbon evaporation under ultrahigh vacuum (UHV) conditions, epitaxial graphene can be grown on SiC(0001) at significantly lower temperatures than with conventional Si sublimation. Therefore, the degradation of the initial SiC surface morphology can be avoided. The layers of graphene are characterized by low energy electron diffraction (LEED), angle resolved ultraviolet photoelectron spectroscopy (ARUPS), and atomic force microscopy (AFM). On SiC the graphene lattice is rotated by 30o in comparison to preparation by annealing in UHV alone.

  Info
Periodical
Materials Science Forum (Volumes 645-648)
Edited by
Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller
Pages
593-596
DOI
10.4028/www.scientific.net/MSF.645-648.593
Citation
A. Al-Temimy, C. Riedl, U. Starke, "Growth and Characterization of Epitaxial Graphene on SiC Induced by Carbon Evaporation ", Materials Science Forum, Vols. 645-648, pp. 593-596, 2010
Online since
April 2010
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Price
$32.00
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