Paper Title:
Strain and Charge in Epitaxial Graphene on Silicon Carbide Studied by Raman Spectroscopy
  Abstract

The phonon frequencies of epitaxial graphene on silicon carbide (SiC) depend on mechanical strain and charge transfer from the substrate to the epitaxial layer. Strain and doping depend on the preparation process and on the number of graphene layers. We measured the phonon frequencies by Raman spectroscopy and compare the results between epitaxial layers fabricated by high temperature annealing and by hydrogen intercalation of the covalently bound graphene layer of the 6 p 3  6 p 3 reconstructed SiC surface. Only the latter graphene layer shows tensile strain, which can partly be explained by lattice mismatch between substrate and epitaxial graphene.

  Info
Periodical
Materials Science Forum (Volumes 645-648)
Edited by
Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller
Pages
603-606
DOI
10.4028/www.scientific.net/MSF.645-648.603
Citation
J. Röhrl, M. Hundhausen, F. Speck, T. Seyller, "Strain and Charge in Epitaxial Graphene on Silicon Carbide Studied by Raman Spectroscopy", Materials Science Forum, Vols. 645-648, pp. 603-606, 2010
Online since
April 2010
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$32.00
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