Paper Title:
Uniformity of Epitaxial Graphene on On-Axis and Off-Axis SiC Probed by Raman Spectroscopy and Nanoscale Current Mapping
  Abstract

Epitaxial graphene was grown on the surface of on-axis and off-axis SiC (0001) by solid state graphitization at high temperatures (2000 °C) in Ar ambient. The effect of the miscut angle on the lateral uniformity of the few layers of graphene (FLG) was investigated by combined application of micro-Raman spectroscopy and Torsion Resonance Conductive Atomic Force Microscopy, the latter method enabling a quantification of the FLG coverage on SiC with submicrometer lateral resolution. While the on-axis samples result in uniform coverage by thin (~ 3 monolayers) FLG, the coverage for off-axis samples is much less uniform, following closely the step bunching morphology of the SiC surface.

  Info
Periodical
Materials Science Forum (Volumes 645-648)
Edited by
Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller
Pages
607-610
DOI
10.4028/www.scientific.net/MSF.645-648.607
Citation
S. Sonde, F. Giannazzo, J. R. Huntzinger, A. Tiberj, M. Syväjärvi, R. Yakimova, V. Raineri, J. Camassel, "Uniformity of Epitaxial Graphene on On-Axis and Off-Axis SiC Probed by Raman Spectroscopy and Nanoscale Current Mapping", Materials Science Forum, Vols. 645-648, pp. 607-610, 2010
Online since
April 2010
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