Paper Title:
Deep UV Raman Spectroscopy of Epitaxial Graphenes on Vicinal 6H-SiC Substrates
| Periodical | Materials Science Forum (Volumes 645 - 648) |
|---|---|
| Main Theme | Silicon Carbide and Related Materials 2009 |
| Edited by | Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller |
| Pages | 611-614 |
| DOI | 10.4028/www.scientific.net/MSF.645-648.611 |
| Citation | Susumu Kamoi et al., 2010, Materials Science Forum, 645-648, 611 |
| Online since | April, 2010 |
| Authors | Susumu Kamoi, Noriyuki Hasuike, Kenji Kisoda, Hiroshi Harima, Kouhei Morita, Satoru Tanaka, Akihiro Hashimoto |
| Keywords | Graphen, Raman Spectroscopy |
| Price | US$ 28,- |
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Abstract
We report microscopic Raman scattering studies of epitaxial graphene grown on SiC substrates using a deep-ultraviolet (UV) laser excitation at 266 nm to elucidate the interaction between the graphene layer and the substrate. The samples were grown on the Si-face of vicinal 6H-SiC (0001) substrates by sublimation of Si from SiC. The G band of the epitaxial graphene layer was clearly observed without any data manipulation. Increasing the number of graphene layers, the peak frequency of the G-band decreases linearly, while the peak width and the intensity increase. The G-band frequency of the graphene layers on SiC is higher than those of exfoliated graphene, which has been ascribed to compression from the substrate.
