Paper Title:
Improvements of the Continuous Feed-Physical Vapor Transport Technique (CF-PVT) for the Seeded Growth of 3C-SiC Crystals
  Abstract

The Continuous Feed-Physical Vapor Transport Technique (CF-PVT) was optimized by considering the heating, thermal insulation and the geometry of growth cavity. The effects of seeds on the surface morphology of the grown layer have been discussed. We successfully grew 3C-SiC bulk with a diameter of 7.0 mm and 3.3 mm in height with a high growth rate of 0.8 mm/h by the CF-PVT technique.

  Info
Periodical
Materials Science Forum (Volumes 645-648)
Edited by
Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller
Pages
63-66
DOI
10.4028/www.scientific.net/MSF.645-648.63
Citation
G. L. Sun, I. G. Galben-Sandulache, T. Ouisse, J. M. Dedulle, M. Pons, R. Madar, D. Chaussende, "Improvements of the Continuous Feed-Physical Vapor Transport Technique (CF-PVT) for the Seeded Growth of 3C-SiC Crystals", Materials Science Forum, Vols. 645-648, pp. 63-66, 2010
Online since
April 2010
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$32.00
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