Paper Title:
Techniques for the Dry Transfer of Epitaxial Graphene onto Arbitrary Substrates
  Abstract

Epitaxial graphene (EG) grown on the carbon-face of SiC has been shown to exhibit high carrier mobilities, in comparison to other growth techniques amenable to wafer-scale graphene fabrication. The transfer of large area (>mm2) graphene films to substrates amenable for specific applications is desirable. We demonstrate the dry transfer of EG from the C-face of 4H-SiC onto SiO2, GaN and Al2O3 substrates via two approaches using either 1) thermal release tape or 2) a spin-on, chemically-etchable dielectric. We will report on the impact that these transfer processes has upon the electrical properties of the transferred EG films.

  Info
Periodical
Materials Science Forum (Volumes 645-648)
Edited by
Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller
Pages
633-636
DOI
10.4028/www.scientific.net/MSF.645-648.633
Citation
J. D. Caldwell, T. J. Anderson, K. D. Hobart, J. C. Culbertson, G. G. Jernigan, F. J. Kub, J. L. Tedesco, J. K. Hite, M. A. Mastro, R. L. Myers-Ward, C. R. Eddy, P. M. Campbell, D. K. Gaskill, "Techniques for the Dry Transfer of Epitaxial Graphene onto Arbitrary Substrates", Materials Science Forum, Vols. 645-648, pp. 633-636, 2010
Online since
April 2010
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