Transport Properties of Single-Layer Epitaxial Graphene on 6H-SiC (0001)
| Periodical | Materials Science Forum (Volumes 645 - 648) |
|---|---|
| Main Theme | Silicon Carbide and Related Materials 2009 |
| Edited by | Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller |
| Pages | 637-641 |
| DOI | 10.4028/www.scientific.net/MSF.645-648.637 |
| Citation | Johannes Jobst et al., 2010, Materials Science Forum, 645-648, 637 |
| Online since | April, 2010 |
| Authors | Johannes Jobst, Daniel Waldmann, Konstantin V. Emtsev, Thomas Seyller, Heiko B. Weber |
| Keywords | Epitaxial Growth, Graphen, Hall Effect |
| Price | US$ 28,- |
We report on electrical measurements on epitaxial graphene on 6H-SiC (0001). The graphene layers were fabricated by thermal decomposition in Argon atmosphere. Large van der Pauw structures and Hall bars were patterned by e-beam lithography, the Hall bars ranged from rather large structures down to sub-micrometer sized Hall bars entirely placed on atomically °at substrate terraces. We present Hall measurements in a broad temperature range, Shubnikov de Haas oscillations and quantum Hall steps. The data lead to the conclusion that electrons in epitaxial graphene have the same quasi-relativistic properties previously shown in exfoliated graphene. A remarkable di®erence, however, is the stronger coupling to substrate phonons and the relatively high charging being an intrinsic property of this epitaxial system.
