Paper Title:
Effects of Thermal Oxidation on Deep Levels Generated by Ion Implantation into n-Type and p-Type 4H-SiC
  Abstract

The authors have investigated effects of thermal oxidation on deep levels in the whole energy range of bandgap of 4H-SiC which are generated by ion implantation, by deep level transient spectroscopy (DLTS). The dominant defects in n-type samples after ion implantation and high-temperature annealing at 1700oC, IN3 (Z1/2: Ec – 0.63 eV) and IN9 (EH6/7: Ec – 1.5 eV) in low-dose-implanted samples, can be remarkably reduced by oxidation at 1150oC. However, in p-type samples, the IP8 (HK4: Ev + 1.4 eV) survives and additional defects, several defects such as IP4 (HK0: Ev + 0.72 eV) appear after thermal oxidation in low-dose-implanted samples. The defects except for the IP8 center can be reduced by subsequent annealing at 1400oC. These phenomena are explained by a model that excess interstitials are generated at the oxidizing interface and diffuse into the bulk region.

  Info
Periodical
Materials Science Forum (Volumes 645-648)
Edited by
Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller
Pages
651-654
DOI
10.4028/www.scientific.net/MSF.645-648.651
Citation
K. Kawahara, G. Alfieri, T. Hiyoshi, G. Pensl, T. Kimoto, "Effects of Thermal Oxidation on Deep Levels Generated by Ion Implantation into n-Type and p-Type 4H-SiC", Materials Science Forum, Vols. 645-648, pp. 651-654, 2010
Online since
April 2010
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Masami Shibagaki, Yasumi Kurematsu, Fumio Watanabe, Shigetaka Haga, Kuniaki Miura, Tomoyuki Suzuki, Masataka Satoh
Abstract:We develop the rapid thermal anneal system of the implanted SiC, Electron Bombardment Anneal System (EBAS), which is able to heat up to 1900...
609
Authors: Nicolas G. Wright, Konstantin Vassilevski, Irina P. Nikitina, Alton B. Horsfall, C. Mark Johnson, Praneet Bhatnagar, Peter Tappin
Abstract:New results are presented of a surface trench defect observed during anneal of room temperature Al implants. The size of the surface defect...
613
Authors: Jeffery B. Fedison, Chris S. Cowen, Jerome L. Garrett, E.T. Downey, James W. Kretchmer, R.L. Klinger, H.C. Peters, Jesse B. Tucker, Kevin Matocha, L.B. Rowland, Steve Arthur
Abstract:Results of a 1200V 4H-SiC vertical DMOSFET based on ion implanted n+ source and pwell regions are reported. The implanted regions are...
1265
Authors: Tsunenobu Kimoto, H. Kawano, Masato Noborio, Jun Suda, Hiroyuki Matsunami
Abstract:Oxide deposition followed by high-temperature annealing in N2O has been investigated to improve the quality of 4H-SiC MOS structures....
987
Authors: Hung Yu Chiu, Yean Kuen Fang, Feng Renn Juang
Chapter 1: Materials Engineering and Processing Technologies of Materials
Abstract:The carbon (C) co-implantation and advanced flash anneal were employed to form the ultra shallow junction (USJ) for future nano CMOS...
98