Is the Liquid Phase a Viable Approach for Bulk Growth of 3C-SiC? |
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| Journal | Materials Science Forum (Volumes 645 - 648) |
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| Volume | Silicon Carbide and Related Materials 2009 |
| Edited by | Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller |
| Pages | 67-70 |
| DOI | 10.4028/www.scientific.net/MSF.645-648.67 |
| Citation | Frédéric Mercier et al., 2010, Materials Science Forum, 645-648, 67 |
| Online since | April, 2010 |
| Authors | Frédéric Mercier, Olivier Kim-Hak, Jean Lorenzzi, Jean Marc Dedulle, Gabriel Ferro, Didier Chaussende |
| Keywords | Bulk Crystal Growth, Liquid Phase Epitaxy (LPE), Vapor-Liquid-Solid Growth |
| Abstract | Despite outstanding properties, the development of 3C-SiC electronics is still suffering from the lack of bulk 3C-SiC substrates. Up to now, there is no real seed and optimized growth processes for this material. We address in this work the bulk growth of 3C-SiC by a two-step-liquid phase approach. By coupling experiments with global process simulation, we address the problems that must be overcome to consider the solution growth technique as a possible approach for the growth of bulk 3C-SiC. |
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