Paper Title:
Investigations on Surge Current Capability of SiC Schottky Diodes by Implementation of New Pad Metallizations
  Abstract

In this paper we describe how a merged pn Schottky diode (MPS diode) is capable to drive surge current levels far beyond the normal current of the diode and how to improve the device in order to achieve even higher surge current levels. For a sine half wave of 10 µs an 8A MPS diode (size: 2.52mm2) with conventional Al pad metallization shows surge current levels of greater than 500A, using Cu it can be increased to ~900A. For 10ms pulse length a different behaviour was observed, here diodes with Al pad metallization show a higher surge current level (80A) compared to Cu pad metallization (~ 40A). The root cause for this negative result at longer pulse time is based in a chemical interaction between Cu and the Schottky metal (Ti). Additionally, an outlook is given how Cu can contribute to improved surge current capability also at longer pulse lengths.

  Info
Periodical
Materials Science Forum (Volumes 645-648)
Edited by
Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller
Pages
673-676
DOI
10.4028/www.scientific.net/MSF.645-648.673
Citation
J. Hilsenbeck, M. Treu, R. Rupp, K. Rüschenschmidt, R. Kern, M. Holz, "Investigations on Surge Current Capability of SiC Schottky Diodes by Implementation of New Pad Metallizations", Materials Science Forum, Vols. 645-648, pp. 673-676, 2010
Online since
April 2010
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