Paper Title:
Consequences of NO Thermal Treatments in the Properties of Dielectric Films / SiC Structures
  Abstract

The consequences of thermal treatments in nitric oxide atmospheres on the characteristics of dielectric films / SiC structures was investigated by high-frequency capacitance-voltage measurements, X-ray photoelectron spectroscopy, and X-ray reflectometry techniques. It was observed that nitrogen incorporation in dielectric films / SiC structures leads to the formation of a thinner interfacial layer that contains carbon. This fact was related to the improvement of electrical properties of those structures.

  Info
Periodical
Materials Science Forum (Volumes 645-648)
Edited by
Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller
Pages
689-692
DOI
10.4028/www.scientific.net/MSF.645-648.689
Citation
F. C. Stedile, S. A. Corrêa, C. Radtke, L. Miotti, I. J.R. Baumvol, G. V. Soares, F. Kong, J. S. Han, L. Hold, S. Dimitrijev, "Consequences of NO Thermal Treatments in the Properties of Dielectric Films / SiC Structures", Materials Science Forum, Vols. 645-648, pp. 689-692, 2010
Online since
April 2010
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Price
$32.00
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