Paper Title:
The Limits of Post Oxidation Annealing in NO
  Abstract

We report on the benefits and the shortcomings of the NO annealing process following observations made on capacitors and transistors with various nitrogen densities at the SiO2/SiC interface. While NO annealing leads to a progressively lower interface state density and higher inversion mobility, consistent with Coulomb-limited transport, MOSFET properties are still limited by the relatively poor interface quality. Moreover, NO induces a large amount of hole traps in the oxide. We establish that these properties are not related to the oxidation rate and we discuss them in terms of the nitrogen content.

  Info
Periodical
Materials Science Forum (Volumes 645-648)
Edited by
Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller
Pages
693-696
DOI
10.4028/www.scientific.net/MSF.645-648.693
Citation
J. Rozen, X. G. Zhu, A. C. Ahyi, J. R. Williams, L. C. Feldman, "The Limits of Post Oxidation Annealing in NO", Materials Science Forum, Vols. 645-648, pp. 693-696, 2010
Online since
April 2010
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Price
$32.00
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