Manganese diffusion in 4H-SiC for possible spintronic applications is investigated. Ion implantation is used to introduce manganese in n-type and p-type 4H-SiC and subsequent heat treatment is performed in the temperature range of 1400 to 1800 °C. The depth distribution of manganese is recorded by secondary ion mass spectrometry and Rutherford backscattering spectrometry in the channeling direction is employed for characterization of crystal disorder. After the heat treatment, the crystal order is improved and a substantial rearrangement of manganese is revealed in the implanted region. However, no pronounced manganese diffusion deeper into the sample is recorded.