Paper Title:
Manganese in 4H-SiC
  Abstract

Manganese diffusion in 4H-SiC for possible spintronic applications is investigated. Ion implantation is used to introduce manganese in n-type and p-type 4H-SiC and subsequent heat treatment is performed in the temperature range of 1400 to 1800 °C. The depth distribution of manganese is recorded by secondary ion mass spectrometry and Rutherford backscattering spectrometry in the channeling direction is employed for characterization of crystal disorder. After the heat treatment, the crystal order is improved and a substantial rearrangement of manganese is revealed in the implanted region. However, no pronounced manganese diffusion deeper into the sample is recorded.

  Info
Periodical
Materials Science Forum (Volumes 645-648)
Edited by
Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller
Pages
701-704
DOI
10.4028/www.scientific.net/MSF.645-648.701
Citation
M. K. Linnarsson, A. Audren, A. Hallén, "Manganese in 4H-SiC", Materials Science Forum, Vols. 645-648, pp. 701-704, 2010
Online since
April 2010
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Price
$32.00
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