Paper Title:
Novel Cap Annealing Process for SiC Crystal Using ECR-Sputtered Carbon Films and ECR Plasma Ashing
  Abstract

A high dose impurity doping process for 4H-SiC crystals has been developed using electron cyclotron resonance (ECR) sputtered carbon cap film and ECR plasma ashing. ECR-sputtered carbon films are newly found crystalline carbon films of which the hardness is comparable to that of diamonds. Since this carbon film showed such a high thermal tolerance that the hardness did not change after 1900oC annealing, this carbon cap film worked well for suppressing roughening during annealing for aluminum-ion implanted 4H-SiC. Cap carbon film can be removed successfully by using high density ECR plasma ashing.

  Info
Periodical
Materials Science Forum (Volumes 645-648)
Edited by
Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller
Pages
725-728
DOI
10.4028/www.scientific.net/MSF.645-648.725
Citation
S. Hirono, H. Torii, T. Tajima, T. Amazawa, S. Umemura, T. Kamata, Y. Hirabayashi, "Novel Cap Annealing Process for SiC Crystal Using ECR-Sputtered Carbon Films and ECR Plasma Ashing", Materials Science Forum, Vols. 645-648, pp. 725-728, 2010
Online since
April 2010
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Price
$32.00
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