Paper Title:
TEM Observations of Ti/AlNi/Au Contacts on p-Type 4H-SiC
  Abstract

Improved AlNi-based ohmic contacts to p-type 4H-SiC have been achieved using low energy ion (Al+)implantation, the addition of a thin Ti layer, and a novel two-step implant activation anneal process. AlNi/Au contacts with and without Ti were studied, which resulted in contact resistivities around 1.8x10-4 -cm2 and 2.0x10-3 -cm2 respectively. Even though these values were higher than those of the Ti/AlNi/W system, which was the focus of previous studies, the reduced anneal temperature (650 to 700°C) implies that Ti/AlNi/Au is a promising composite configuration. Cross-sectional TEM and EDX were used to investigate the interfacial structure of the contacts. One possible mechanism for the improved ohmic contact behavior is that the addition of Au and Ti resulted in a reduction barrier height.

  Info
Periodical
Materials Science Forum (Volumes 645-648)
Edited by
Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller
Pages
729-732
DOI
10.4028/www.scientific.net/MSF.645-648.729
Citation
B. H. Tsao, J. W. Lawson, J. D. Scofield, J. F. Baca, "TEM Observations of Ti/AlNi/Au Contacts on p-Type 4H-SiC", Materials Science Forum, Vols. 645-648, pp. 729-732, 2010
Online since
April 2010
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Bang Hung Tsao, Sam Liu, James D. Scofield
841
Authors: Jeffery B. Fedison, Chris S. Cowen, Jerome L. Garrett, E.T. Downey, James W. Kretchmer, R.L. Klinger, H.C. Peters, Jesse B. Tucker, Kevin Matocha, L.B. Rowland, Steve Arthur
Abstract:Results of a 1200V 4H-SiC vertical DMOSFET based on ion implanted n+ source and pwell regions are reported. The implanted regions are...
1265
Authors: A.V. Adedeji, Ayayi Claude Ahyi, John R. Williams, M.J. Bozack, S.E. Mohney, B. Liu, James D. Scofield
Abstract:Composite ohmic contacts designed for SiC devices operating in air at 350°C have been studied. Ohmic contacts to n- and p-4H-SiC were...
879
Authors: Bang Hung Tsao, Jacob Lawson, James D. Scofield
Abstract:AlNi and Ni2Si based ohmic contacts to p-type 4H-SiC have been produced using low energy ion implantation, a Ti contact layer, and...
903
Authors: Michael R. Jennings, Amador Pérez-Tomás, D. Walker, Lin Zhu, Peter A. Losee, W. Huang, S. Balachandran, Owen J. Guy, James A. Covington, T. Paul Chow, Philip A. Mawby
Abstract:In this work, we have investigated triple and innovative multiple stacked contacts onto ptype SiC in order to evaluate whether or not there...
697