Paper Title:
Reliability Tests of Au-Metallized Ni-Based Ohmic Contacts to 4H-n-SiC with and without Nanocomposite Diffusion Barriers
  Abstract

The reliability of Ni2Si/n-SiC ohmic contacts with Au overlayer either without or with Ta-Si-N diffusion barrier was investigated after long-time aging in air at 400oC and rapid thermal annealing in Ar up to 800oC. It is shown that aging of the Au/Ni2Si/n-SiC contacts in air at 400oC resulted in complete degradation due to both oxygen penetration and interdiffusion/reaction processes. In contrast, only a small change in properties was detected on the contacts annealed in Ar at 800°C. The stability of both electrical and structural properties of Au/TaSiN/Ni2Si/n-SiC thermally stressed contacts at different conditions points out their superior thermal stability.

  Info
Periodical
Materials Science Forum (Volumes 645-648)
Edited by
Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller
Pages
737-740
DOI
10.4028/www.scientific.net/MSF.645-648.737
Citation
A. V. Kuchuk, M. Guziewicz, R. Ratajczak, M. Wzorek, V.P. Kladko, A. Piotrowska, "Reliability Tests of Au-Metallized Ni-Based Ohmic Contacts to 4H-n-SiC with and without Nanocomposite Diffusion Barriers", Materials Science Forum, Vols. 645-648, pp. 737-740, 2010
Online since
April 2010
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$32.00
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