Paper Title:
SiC-Die-Attachment for High Temperature Applications
  Abstract

In this paper a die-attachment technology for high temperature applications based on the Low Temperature Joining Technique (LTJT) is presented. The present challenge is to fit the thermal expansion as well as the mechanical properties of the die-attach layer to the characteristics of chip and substrate. While the classic LTJT is based on sintering a sub-micron silver paste at temperatures between 150°C and 300°C to bond an electronic device to a substrate, the modified procedure employs a powder mixture consisting of silver powder and special filling powder material. Type and amount of the filling material is dependent on the application and the used substrates. Considering a low thermal expansion and high electrical as well as thermal conductivity we chose SiC, TiC, and BN as filling materials in this work.

  Info
Periodical
Materials Science Forum (Volumes 645-648)
Edited by
Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller
Pages
741-744
DOI
10.4028/www.scientific.net/MSF.645-648.741
Citation
N. Heuck, G. Palm, T. Sauerberg, A. Stranz, A. Waag, A. Bakin, "SiC-Die-Attachment for High Temperature Applications", Materials Science Forum, Vols. 645-648, pp. 741-744, 2010
Online since
April 2010
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Thomas G. Lei, Jesus Calata, Shu Fang Luo, Guo Quan Lu, Xu Chen
Abstract:Today, reflow soldering is a commonly used technique to establish large-area joints in power electronics modules. These joints are needed to...
2948
Authors: Bang Hung Tsao, Jacob Lawson, James D. Scofield, Clinton Laing, Jeffery Brown
Abstract:Three dimensional models of both single-chip and multiple-chip power sub-modules were generated using ANSYS in order to simulate the effects...
1227
Authors: Liang Yu Chen, R. Wayne Johnson, Philip G. Neudeck, Glenn M. Beheim, David J. Spry, Roger D. Meredith, Gary W. Hunter
Chapter 6: SiC Devices, Circuits and Systems
Abstract:This paper reviews ceramic substrates and thick-film metallization based packaging technologies in development for 500°C silicon carbide...
1033
Authors: Stanislas Hascoët, Cyril Buttay, Dominique Planson, Rodica Chiriac, Amandine Masson
Chapter 9: Processing Diverse
Abstract:Pressureless silver sintering is an interesting die-attach technique that could overcome the reliability limitations of the power electronic...
851
Authors: Wei Liu, Peng Jin
Chapter 16: Technologies and Equipment for Manufacturing and Processing of Materials
Abstract:Heat flux inside the HP LED chip is also increasing with the increasing drive current, integration and miniaturization of LED chips. The...
1900