Paper Title:
Development of a Wire-Bond Technology for SiC High Temperature Applications
  Abstract

In this paper a wire-bond technology for high temperatures (up to 500°C) based on silver-wire is presented. The mechanical properties of silver thick-wire wedge bonds are analyzed and compared to previously presented silver-stripes fastened onto the chip with the Low Temperature Joining Technique (LTJT) and to common aluminum thick-wire.

  Info
Periodical
Materials Science Forum (Volumes 645-648)
Edited by
Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller
Pages
749-752
DOI
10.4028/www.scientific.net/MSF.645-648.749
Citation
N. Heuck, F. Baars, A. Bakin, A. Waag, "Development of a Wire-Bond Technology for SiC High Temperature Applications", Materials Science Forum, Vols. 645-648, pp. 749-752, 2010
Online since
April 2010
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Price
$32.00
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