Paper Title:
Recent Advances in Surface Preparation of Silicon Carbide and other Wide Band Gap Materials
  Abstract

In this contribution we recapitulate the state of the art of silicon carbide and related materials polishing. Since the demonstration (by Vicente et al) of an ultimate preparation of Si-face -SiC wafers some important progresses were made in the field of surface preparation of silicon carbide and related materials. This concerns the industrial, high output treatments of substrates of increasing size, as well as the research studies of the feasibility of new preparation approaches for wide band gap materials. We also discuss the problems related to the polishing of the polycrystalline material and to the planarization of epilayers.

  Info
Periodical
Materials Science Forum (Volumes 645-648)
Edited by
Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller
Pages
753-758
DOI
10.4028/www.scientific.net/MSF.645-648.753
Citation
M. Zielinski, C. Moisson, S. Monnoye, H. Mank, T. Chassagne, S. Roy, A. E. Bazin, J. F. Michaud, M. Portail, "Recent Advances in Surface Preparation of Silicon Carbide and other Wide Band Gap Materials", Materials Science Forum, Vols. 645-648, pp. 753-758, 2010
Online since
April 2010
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Price
$32.00
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