Paper Title:
Reactive-Ion-Etching Induced Deep Levels Observed in n-Type and p-Type 4H-SiC
  Abstract

In this study, deep levels are investigated, which are introduced by reactive ion etching (RIE) of n-type/p-type 4H-SiC. The capacitance of as-etched p-type SiC is remarkably small due to compensation or deactivation of acceptors. These acceptors can be recovered to the initial concentration of the as-grown sample after annealing at 1000oC. However, various kinds of defects remain at a total density of ~5× 1014 cm-3 in a surface-near region from 0.3 μm to 1.0 μm even after annealing at 1000oC. The following defects are detected by Deep Level Transient Spectroscopy (DLTS): IN2 (EC – 0.35 eV), EN (EC – 1.6 eV), IP1 (EV + 0.35 eV), IP2 (HS1: EV + 0.39 eV), IP4 (HK0: EV + 0.72 eV), IP5 (EV + 0.75 eV), IP7 (EV + 1.3 eV), and EP (EV + 1.4 eV). These defects generated by RIE can be significantly reduced by thermal oxidation and subsequent annealing at 1400oC.

  Info
Periodical
Materials Science Forum (Volumes 645-648)
Edited by
Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller
Pages
759-762
DOI
10.4028/www.scientific.net/MSF.645-648.759
Citation
K. Kawahara, G. Alfieri, M. Krieger, T. Kimoto, "Reactive-Ion-Etching Induced Deep Levels Observed in n-Type and p-Type 4H-SiC", Materials Science Forum, Vols. 645-648, pp. 759-762, 2010
Online since
April 2010
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Konstantin Vassilevski, J. Hedley, Alton B. Horsfall, C. Mark Johnson, Nicolas G. Wright
925
Authors: N. Chuchvaga, E. Bogdanova, A. Strelchuk, Evgenia V. Kalinina, D.B. Shustov, M. Zamoryanskaya, V. Shkuratov
Chapter 7: Electrical and Structural Characterization
Abstract:A comparative research of the cathodoluminescence and electrical characteristics of the samples 4H-SiC irradiated with high energy Xe ions...
625
Authors: Sethu Saveda Suvanam, Milad Ghadami Yazdi, Muhammad Usman, Mats Götelid, Anders Hallén
3.2 MOS Processing, SiC-SiO2 Interfaces and other Dielectrics
Abstract:In this paper, the interface between Al2O3 and p-type 4H-SiC is evaluated using x-ray photoelectron spectroscopy (XPS)...
693