Paper Title:
Low-Pressure Fast Growth and Characterization of 4H-SiC Epilayers
  Abstract

Fast and thick 4H-SiC epitaxial growth is demonstrated in a vertical-type reactor under a low system pressure within the range 13-40 mbar. A very fast growth rate of up to 250 m/h is obtained. The material quality of the epilayers grown in the reactor is evaluated by low-temperature photoluminescence, deep level transient spectroscopy, microwave photoconductive decay, synchrotron topography and room temperature PL imaging. The carrier lifetime of thick epilayers with or without the application of the C+-implantation/annealing method and extended defects in the epilayers grown on 8º and 4º off substrates are discussed.

  Info
Periodical
Materials Science Forum (Volumes 645-648)
Edited by
Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller
Pages
77-82
DOI
10.4028/www.scientific.net/MSF.645-648.77
Citation
H. Tsuchida, M. Ito, I. Kamata, M. Nagano, T. Miyazawa, N. Hoshino, "Low-Pressure Fast Growth and Characterization of 4H-SiC Epilayers", Materials Science Forum, Vols. 645-648, pp. 77-82, 2010
Online since
April 2010
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Price
$32.00
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