Paper Title:
Hexagonality and Stacking Sequence Dependence of Etching Properties in Cl2-O2-SiC System
  Abstract

Thermal etching of hexagonal (4H-, 6H-, 8H- and 10H-), rhombohedral (15R- and 21R-), and cubic (3C-) SiC Si-faces was performed between 900 and 1000oC in a mixed gas of chlorine (Cl2) and oxygen (O2). In the case of well oriented Si-faces, the 3C-SiC (111) substrate was etched fastest in polytypes. The etching rate in the dislocation-free area depended on the hexagonality. Etch pits with definite shapes appeared, which depend on the type of dislocation and crystal structures. On the basis of these results, etching properties are discussed.

  Info
Periodical
Materials Science Forum (Volumes 645-648)
Edited by
Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller
Pages
771-774
DOI
10.4028/www.scientific.net/MSF.645-648.771
Citation
T. Hatayama, H. Koketsu, H. Yano, T. Fuyuki, "Hexagonality and Stacking Sequence Dependence of Etching Properties in Cl2-O2-SiC System", Materials Science Forum, Vols. 645-648, pp. 771-774, 2010
Online since
April 2010
Keywords
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$32.00
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