Paper Title:
Self-Formation of Specific Pyramidal Planes in 4H-SiC Formed by Chlorine Based Ambience
  Abstract

.   Crystallographically specific pyramidal planes in 4H-SiC could be naturally formed at mesa sidewalls by a thermal etching at 900oC in a chlorine (Cl2) based ambience. The mesa structures have been fabricated on the 4H-SiC C-face with 0-45o off-angle toward [11-20]. The etched surface was rather smooth, and bunched step structures on the specific pyramidal planes were not observed with atomic force and scanning electron microscopes. The formation mechanisms of the specific pyramidal planes at mesa sidewalls are discussed on the basis of these experimental results.

  Info
Periodical
Materials Science Forum (Volumes 645-648)
Edited by
Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller
Pages
779-782
DOI
10.4028/www.scientific.net/MSF.645-648.779
Citation
H. Koketsu, T. Hatayama, K. Amijima, H. Yano, T. Fuyuki, "Self-Formation of Specific Pyramidal Planes in 4H-SiC Formed by Chlorine Based Ambience", Materials Science Forum, Vols. 645-648, pp. 779-782, 2010
Online since
April 2010
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