Paper Title:
Influence of Negative Charging on High Rate SiC Etching for GaN HEMT MMICs
  Abstract

We discuss the influence of negative charging on high-rate ICP etching of SiC via-holes for GaN HEMT MMICs. There is large differential etching behavior such as etch rate, etching profile, and RIE lag between S.I.- and n-SiC substrates because of the difference in wafer heating and negative charging of the sidewall during etching between both substrates. We analyze the difference in negative charging between both substrates by simulating the etching profile.

  Info
Periodical
Materials Science Forum (Volumes 645-648)
Edited by
Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller
Pages
791-794
DOI
10.4028/www.scientific.net/MSF.645-648.791
Citation
N. Okamoto, K. Imanishi, T. Kikkawa, N. Nara, "Influence of Negative Charging on High Rate SiC Etching for GaN HEMT MMICs", Materials Science Forum, Vols. 645-648, pp. 791-794, 2010
Online since
April 2010
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