Paper Title:
Influence of the UV Light Intensity on the Photoelectrochemical Planarization Technique for Gallium Nitride
  Abstract

We have developed a novel planarization technique for gallium nitride (GaN) substrates using a photo-electro chemical process and solid acid catalyst. In this method, a GaN surface is oxidized by ultraviolet (UV) light irradiation, and the oxide layer is chemically removed by a solid acid catalyst. In the current work, the dependence of the removal rate on the UV light intensity was investigated.

  Info
Periodical
Materials Science Forum (Volumes 645-648)
Edited by
Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller
Pages
795-798
DOI
10.4028/www.scientific.net/MSF.645-648.795
Citation
S. Sadakuni, J. Murata, K. Yagi, Y. Sano, K. Arima, A. N. Hattori, T. Okamoto, K. Yamauchi, "Influence of the UV Light Intensity on the Photoelectrochemical Planarization Technique for Gallium Nitride", Materials Science Forum, Vols. 645-648, pp. 795-798, 2010
Online since
April 2010
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Price
$32.00
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