Paper Title:
Model Calculations of SiC Oxide Growth Rate at Various Oxidation Temperatures Based on the Silicon and Carbon Emission Model
  Abstract

We have tried to apply the oxidation model of SiC proposed previously, termed ‘Si-C emission model’, to the oxide growth rate at various oxidation temperatures. We have found that the model well reproduces the oxide thickness dependences of oxide growth rates for all of the temperatures measured for both of the SiC Si- and C-faces. We have estimated the temperature dependence of oxide depth profiles of Si and C interstitials by using the Si-C emission model, and discussed the structure at/near the SiC–oxide interface.

  Info
Periodical
Materials Science Forum (Volumes 645-648)
Edited by
Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller
Pages
809-812
DOI
10.4028/www.scientific.net/MSF.645-648.809
Citation
Y. Hijikata, H. Yaguchi, S. Yoshida, "Model Calculations of SiC Oxide Growth Rate at Various Oxidation Temperatures Based on the Silicon and Carbon Emission Model", Materials Science Forum, Vols. 645-648, pp. 809-812, 2010
Online since
April 2010
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$32.00
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