Paper Title:
Rapid and Efficient Oxidation Process of SiC by In Situ Multiple RTP Steps
  Abstract

Rapid Thermal Processing (RTP) has been evaluated as an alternative to conventional furnace technique for oxidation of 4H- and 3C-SiC. We show that the growth of the SiO2 films in a RTP chamber is orders of magnitude faster than in a conventional furnace. As well as being fast, this process leads to oxide films with quality comparable or even better than the one grown in classical furnaces. Studying different gas for oxidizing and annealing ambient, we demonstrate that SiO2/SiC interface is significantly improved when using N2O instead of O2 or even N2-O2 dilution.

  Info
Periodical
Materials Science Forum (Volumes 645-648)
Edited by
Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller
Pages
817-820
DOI
10.4028/www.scientific.net/MSF.645-648.817
Citation
A. Constant, N. Camara, P. Godignon, M. Berthou, J. Camassel, J. M. Decams, "Rapid and Efficient Oxidation Process of SiC by In Situ Multiple RTP Steps", Materials Science Forum, Vols. 645-648, pp. 817-820, 2010
Online since
April 2010
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Price
$32.00
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