Paper Title:
Electrical Characterization and Reliability of Nitrided-Gate Insulators for N- and P-Type 4H-SiC MIS Devices
  Abstract

In this paper, nitrided insulators such as N2O-grown oxides, deposited SiO2 annealed in N2O, and deposited SiNx/SiO2 annealed in N2O on thin-thermal oxides have been investigated for realization of high performance n- and p-type 4H-SiC MIS devices. The MIS capacitors were utilized to evaluate MIS interface characteristics and the insulator reliability. The channel mobility was determined by using the characteristics of planar MISFETs. Although the N2O-grown oxides are superior to the dry O2-grown oxides, the deposited SiO2 and the deposited SiNx/SiO2 exhibited lower interface state density (n-MIS: below 7x1011 cm-2eV-1 at EC-0.2 eV, p-MIS: below 6x1011 cm-2eV-1 at EV+0.2 eV) and higher channel mobility (n-MIS: over 25 cm2/Vs, p-MIS: over 10 cm2/Vs). In terms of reliability, the deposited SiO2 annealed in N2O exhibits a high charge-to-breakdown over 50 C/cm2 at room temperature and 15 C/cm2 at 200°C. The nitrided-gate insulators formed by deposition method have superior characteristics than the thermal oxides grown in N2O.

  Info
Periodical
Materials Science Forum (Volumes 645-648)
Edited by
Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller
Pages
825-828
DOI
10.4028/www.scientific.net/MSF.645-648.825
Citation
M. Noborio, M. Grieb, A. J. Bauer, D. Peters, P. Friedrichs, J. Suda, T. Kimoto, "Electrical Characterization and Reliability of Nitrided-Gate Insulators for N- and P-Type 4H-SiC MIS Devices", Materials Science Forum, Vols. 645-648, pp. 825-828, 2010
Online since
April 2010
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Takuji Hosoi, Makoto Harada, Yusuke Kagei, Yuu Watanabe, Takayoshi Shimura, Shuhei Mitani, Yuki Nakano, Takashi Nakamura, Heiji Watanabe
Abstract:We propose the use of an aluminum oxynitride (AlON) gate insulator for 4H-SiC MIS devices. Since direct deposition of AlON on 4H-SiC...
541
Authors: Romain Esteve, Adolf Schöner, Sergey A. Reshanov, Carl Mikael Zetterling
Abstract:The electrical properties of oxides fabricated on n-type 3C-SiC (001) using wet oxidation and an advanced oxidation process combining SiO2...
829
Authors: Muneharu Kato, Yuichiro Nanen, Jun Suda, Tsunenobu Kimoto
Abstract:Post-oxidation annealing (POA) in Ar at high temperature has been performed during fabrication of 4H-SiC metal-oxide-semiconductor...
445
Authors: Hua Rong, Yogesh K. Sharma, Tian Xiang Dai, Fan Li, M.R. Jennings, Stephen A.O. Russell, David M. Martin, Philip A. Mawby
3.2 MOS Processing, SiC-SiO2 Interfaces and other Dielectrics
Abstract:This paper presents and analyse the experimental results of 4H-SiC(0001) lateral MOSFETs and MOS capacitors with gate oxides grown directly...
623