Paper Title:
Nanostructuring Techniques for 3C-SiC(100) NEMS Structures
  Abstract

In this work nanostructures based on a 30 nm thick 3C-SiC (100) heteroepitaxially grown on Si(100) are demonstrated. They consist of free standing nanoresonators with dimensions below 50 nm. The free standing nanostructures and resonators were defined by electron beam lithography using hydrogen silsesquioxane (HSQ) as a negative tone e-beam resist acting as a selective etching mask during the anisotropic and isotropic dry etching. The influences of the proximity effect, the crystallographic orientation, the angle of exposing on the feature size are highlighted.

  Info
Periodical
Materials Science Forum (Volumes 645-648)
Edited by
Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller
Pages
841-844
DOI
10.4028/www.scientific.net/MSF.645-648.841
Citation
M. Hofer, T. Stauden, I. W. Rangelow, J. Pezoldt, "Nanostructuring Techniques for 3C-SiC(100) NEMS Structures", Materials Science Forum, Vols. 645-648, pp. 841-844, 2010
Online since
April 2010
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