Paper Title:
SiC on SOI Resonators: A Route for Electrically Driven MEMS in Harsh Environment
  Abstract

In this study, a SiC on insulator growth is optimized, in order to electrically isolate the active structural layer towards the substrate. High quality single crystalline SiC was grown on SOI and SIS substrates. Smooth surface, low stress and bowing, confirmed by microscopy techniques, SEM, AFM, X-Ray diffraction and Raman spectroscopy, have been obtained. SiC electrostatic resonators on insulated substrates were also fabricated, and electrically driven. These results demonstrate that this material is very promising for MEMS application requiring isolation from the substrate and operation in harsh ambient.

  Info
Periodical
Materials Science Forum (Volumes 645-648)
Edited by
Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller
Pages
845-848
DOI
10.4028/www.scientific.net/MSF.645-648.845
Citation
M. Placidi, A. Pérez-Tomás, P. Godignon, N. Mestres, G. Abadal, T. Chassagne, M. Zielinski, "SiC on SOI Resonators: A Route for Electrically Driven MEMS in Harsh Environment", Materials Science Forum, Vols. 645-648, pp. 845-848, 2010
Online since
April 2010
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Price
$32.00
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