In this study, a SiC on insulator growth is optimized, in order to electrically isolate the active structural layer towards the substrate. High quality single crystalline SiC was grown on SOI and SIS substrates. Smooth surface, low stress and bowing, confirmed by microscopy techniques, SEM, AFM, X-Ray diffraction and Raman spectroscopy, have been obtained. SiC electrostatic resonators on insulated substrates were also fabricated, and electrically driven. These results demonstrate that this material is very promising for MEMS application requiring isolation from the substrate and operation in harsh ambient.