Paper Title:
Thinning of SiC Wafer by Plasma Chemical Vaporization Machining
  Abstract

In order to reduce the on-resistance in vertical power transistors, backside thinning is required after device processing. However, it is difficult to thin an SiC wafer with a high yield rate by conventional mechanical machining because its high hardness and brittleness cause cracking and chipping during thinning. In this study, a small rectangular SiC sample was thinned by plasma chemical vaporization machining (PCVM), which is plasma etching using atmospheric-pressure plasma. As a result, the sample was successfully thinned to 40 m without any cracking or chipping. Furthermore, the surface roughness was improved after thinning, and the edge of the wafer became rounded automatically. Therefore, PCVM can be used as an effective method for thinning SiC wafers.

  Info
Periodical
Materials Science Forum (Volumes 645-648)
Edited by
Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller
Pages
857-860
DOI
10.4028/www.scientific.net/MSF.645-648.857
Citation
Y. Sano, T. Kato, T. Hori, K. Yamamura, H. Mimura, Y. Katsuyama, K. Yamauchi, "Thinning of SiC Wafer by Plasma Chemical Vaporization Machining", Materials Science Forum, Vols. 645-648, pp. 857-860, 2010
Online since
April 2010
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Price
$32.00
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