Paper Title:
Residual Stress Measurement and Simulation of 3C-SiC Single and Poly Crystal Cantilevers
  Abstract

The fabrication of SiC MEMS-based sensors requires new processes able to realize microstructures on either bulk material or on the SiC surface. The hetero-epitaxial growth of 3C-SiC on silicon substrates allows one to overcome the traditional limitations of SiC micro-fabrication. In this work a comparison between single crystal and poly crystal 3C-SiC micro-machined structures will be presented. The free-standing structures realized (cantilevers and membrane) are also a suitable method for residual field stress investigation in 3C-SiC films. Measurement of the Raman shift indicates that the mono and poly-crystal 3C-SiC structures release the stress in different ways. Finite element analysis was performed to determine the stress field inside the films and provided a good fit to the experimental data. A comprehensive experimental and theoretical study of 3C-SiC MEMS structures has been performed and is presented.

  Info
Periodical
Materials Science Forum (Volumes 645-648)
Edited by
Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller
Pages
865-868
DOI
10.4028/www.scientific.net/MSF.645-648.865
Citation
R. Anzalone, M. Camarda, D. Alquier, M. Italia, A. Severino, N. Piluso, A. La Magna, G. Foti, C. Locke, S. E. Saddow, A. Roncaglia, F. Mancarella, A. Poggi, G. D'Arrigo, F. La Via, "Residual Stress Measurement and Simulation of 3C-SiC Single and Poly Crystal Cantilevers", Materials Science Forum, Vols. 645-648, pp. 865-868, 2010
Online since
April 2010
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$32.00
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