Paper Title:
Germanium – Silicon Carbide Heterojunction Diodes – A Study in Device Characteristics with Increasing Layer Thickness and Deposition Temperature
  Abstract

SiC schottky diodes take advantage of the material's superior reverse breakdown voltage when compared to Silicon (Si) [1]. However, when considered for MOSFET applications, the high concentration of interface traps at the SiC/SiO2 interface reduce the material's already low channel mobility [2]. Therefore, a Ge/SiC heterojunction solution becomes an attractive prospect, whereby the Ge forms the control region after being epitaxially grown on the SiC. With a well established Ge-High K dielectric technology [3], a carbon-free oxide would exist, leaving a channel-region with a mobility approximately four times that of SiC.

  Info
Periodical
Materials Science Forum (Volumes 645-648)
Edited by
Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller
Pages
889-892
DOI
10.4028/www.scientific.net/MSF.645-648.889
Citation
P. M. Gammon, A. Pérez-Tomás, M. R. Jennings, G.J. Roberts, V.A. Shah, J. A. Covington, P. A. Mawby, "Germanium – Silicon Carbide Heterojunction Diodes – A Study in Device Characteristics with Increasing Layer Thickness and Deposition Temperature", Materials Science Forum, Vols. 645-648, pp. 889-892, 2010
Online since
April 2010
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Price
$32.00
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